Archives of Acoustics, 10, 2, pp. 143-150, 1985
An acoustic method for determining the parameters of fast surface in semiconductors states
The paper presents an acoustic method for determining the parameters of fast surface states in semiconductors. This method uses the interactions of the photon-electron type for determining both the effective carrier life-time r influ¬enced by the fast surface states and the velocity g of the carrier trapping by surface traps. Some experimental results of the parameters r and g on a real (111) Si surface, obtained by this method of investigation are presented.
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